Volume 36; Issue 6

IEEE Electron Device Letters

Volume 36; Issue 6

1

Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric

Shao, Yang, Xiao, Xiang, He, Xin, Deng, Wei, Zhang, Shengdong

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 495 KB

english, 2015

2

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

Tang, Yan, Shinohara, Keisuke, Regan, Dean, Corrion, Andrea, Brown, David, Wong, Joel, Schmitz, Adele, Fung, Helen, Kim, Samuel, Micovic, Miroslav

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.29 MB

english, 2015

3

Trap Profiling in Nitride Storage Layer in 3-D NAND Flash Memory Using Retention Characteristics and AC- $\text{g}_{\mathrm {m}}$ Method

Jeong, Min-Kyu, Kang, Ho-Jung, Joe, Sung-Min, Park, Sung-Kye, Park, Byung-Gook, Lee, Jong-Ho

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 256 KB

english, 2015

4

On the Optimal ON/OFF Resistance Ratio for Resistive Switching Element in One-Selector One-Resistor Crosspoint Arrays

Zhang, Leqi, Cosemans, Stefan, Wouters, Dirk J., Groeseneken, Guido, Jurczak, Malgorzata, Govoreanu, Bogdan

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 733 KB

english, 2015

5

Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid

Chang, Kuan-Chang, Tsai, Tsung-Ming, Chang, Ting-Chang, Zhang, Rui, Chen, Kai-Huang, Chen, Jung-Hui, Chen, Min-Chen, Huang, Hui-Chun, Zhang, Wei, Lin, Chih-Yang, Tseng, Yi-Ting, Lin, Hua-Ching, Zheng,

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 377 KB

english, 2015

6

Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory

Fang, Runchen, Chen, Wenhao, Gao, Ligang, Yu, Weijie, Yu, Shimeng

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 626 KB

english, 2015

7

Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory

Zhang, Wei, Hu, Ying, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chen, Hsin-Lu, Su, Yu-Ting, Zhang, Rui, Hung, Ya-Chi, Syu, Yong-En, Chen, Min-Chen, Zheng, Jin-Cheng, Lin, Hua-Ching, Sze,

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 600 KB

english, 2015

8

Degradation of Gate Voltage Controlled Multilevel Storage in One Transistor One Resistor Electrochemical Metallization Cell

Xu, Xiaoxin, Lv, Hangbing, Li, Yuxiang, Liu, Hongtao, Wang, Ming, Liu, Qi, Long, Shibing, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 290 KB

english, 2015

9

Inversion in Metal–Oxide–Semiconductor Capacitors on Boron-Doped Diamond

Kovi, Kiran Kumar, Vallin, Orjan, Majdi, Saman, Isberg, Jan

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 263 KB

english, 2015

10

Cylindrical Liquid Crystal Microlens Array With Rotary Optical Power and Tunable Focal Length

Algorri, Jose Francisco, Urruchi, Virginia, Bennis, Noureddine, Sanchez-Pena, Jose Manuel, Oton, Jose Manuel

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 828 KB

english, 2015

11

Effect of Germanium Preamorphization Implant on Performance and Gate-Induced Drain Leakage in SiGe Channel pFET

Tiwari, Vishal A., Teh, Young Way, Jaeger, Daniel, Divakaruni, Rama, Nair, Deleep R.

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.68 MB

english, 2015

12

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Guo, Luke W., Lu, Wenjie, Bennett, Brian R., Boos, John Brad, Alamo, Jesus A. del

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 538 KB

english, 2015

13

Extremely Uniform Tunnel Barriers for Low-Cost Device Manufacture

Missous, Mohamed, Kelly, Michael J., Sexton, James

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 558 KB

english, 2015

14

A New Solution for Superjunction Lateral Double Diffused MOSFET by Using Deep Drain Diffusion and Field Plates

Lin, Zhi, Chen, Xingbi

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.04 MB

english, 2015

15

AlGaN/GaN Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor Integrated With Clamp Circuit to Enable Normally-Off Operation

Han, Sang-Woo, Park, Sung-Hoon, Lee, Jae-Gil, Lim, Jongtae, Cha, Ho-Young

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 669 KB

english, 2015

16

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Huang, Tongde, Malmros, Anna, Bergsten, Johan, Gustafsson, Sebastian, Axelsson, Olle, Thorsell, Mattias, Rorsman, Niklas

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 941 KB

english, 2015

17

An Improved Model of Self-Heating Effects for Ultrathin Body SOI nMOSFETs Based on Phonon Scattering Analysis

Zhang, Guohe, Gu, Yixi, Li, Jianxiong, Tao, Huibin

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 680 KB

english, 2015

18

Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

Lin, Chih-Yang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Pan, Chih-Hung, Zhang, Rui, Liu, Kuan-Hsien, Chen, Hua-Mao, Tseng, Yi-Ting, Hung, Ya-Chi, Syu, Yong-En, Zheng, Jin-Cheng, Wang,

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.27 MB

english, 2015

19

Subsecond Response of Humidity Sensor Based on Graphene Oxide Quantum Dots

Li, Ning, Chen, Xiang-Dong, Chen, Xin-Peng, Ding, Xing, Li, Xiao-Yu

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 738 KB

english, 2015

20

A Small Signal Amplifier Based on Ionic Liquid Gated Black Phosphorous Field Effect Transistor

Das, Saptarshi, Zhang, Wei, Thoutam, Laxman Raju, Xiao, Zhili, Hoffmann, Axel, Demarteau, Marcel, Roelofs, Andreas

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.11 MB

english, 2015

21

Correction to “Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier” [Apr 15 318-320]

Liu, Cheng, Yang, Shu, Liu, Shenghou, Tang, Zhikai, Wang, Hanxing, Jiang, Qimeng, Chen, Kevin J.

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 73 KB

english, 2015

22

Multiring Circular Transmission Line Model for Ultralow Contact Resistivity Extraction

Yu, Hao, Schaekers, Marc, Schram, Tom, Rosseel, Erik, Martens, Koen, Demuynck, Steven, Horiguchi, Naoto, Barla, Kathy, Collaert, Nadine, De MeyerIEEE, Kristin, Thean, Aaron

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.10 MB

english, 2015

23

Low-Voltage Transient/Biodegradable Transistors Based on Free-Standing Sodium Alginate Membranes

Guo, Jie, Liu, Jingquan, Yang, Bin, Zhan, Guanghui, Kang, Xiaoyang, Tian, Hongchang, Tang, Longjun, Chen, Xiang, Yang, Chunsheng

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.29 MB

english, 2015

24

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

Feng, Hao, Yang, Wentao, Onozawa, Yuichi, Yoshimura, Takashi, Tamenori, Akira, Sin, Johnny K. O.

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.14 MB

english, 2015

25

Characterization of Single Poly Radiation Sensors

Pikhay, Evgeny, Roizin, Yakov, Nemirovsky, Yael

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 692 KB

english, 2015

26

Design and Characterization of a Capacitive Micromachined Transducer With a Deflectable Bottom Electrode

Emadi, Tahereh Arezoo, Buchanan, Douglas A.

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 678 KB

english, 2015

27

Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices

Sung, Woongje, Huang, Alex Q., Baliga, B. Jayant

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1003 KB

english, 2015

28

Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode

Wang, Lin-Lin, Peng, Wu, Jiang, Yu-Long, Li, Bing-Zong

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 901 KB

english, 2015

29

Pixel Architecture for Low-Power Liquid Crystal Display Comprising Oxide and Ferroelectric Memory Thin Film Transistors

Lee, Seung-Hyuck, Kim, Jongbin, Yoon, Seong Ho, Kim, Kyeong-Ah, Yoon, Sung-Min, Byun, Chunwon, Hwang, Chi-Sun, Kim, Gi Heon, Cho, Kyoung-Ik, Lee, Seung-Woo

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 776 KB

english, 2015

30

Ab Initio Study of Temperature, Humidity, and Covalent Functionalization-Induced Bandgap Change of Single-Walled Carbon Nanotubes

Chen, Xian-Ping, Yang, Ning, Jiang, Jun-Ke, Liang, Qiu-Hua, Yang, Dao-Guo, Zhang, Guo-Qi, Ren, Tian-Ling

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 648 KB

english, 2015

31

Local-Degradation-Induced Threshold Voltage Shift in Turned-OFF Amorphous InGaZnO Thin Film Transistors Under AC Drain Bias Stress

Kim, Jong In, Cho, In-Tak, Jeong, Chan-Yong, Lee, Daeun, Kwon, Hyuck-In, Jung, Keum Dong, Park, Mun Soo, Seo, Mi Seon, Kim, Tae Young, Lee, Je Hun, Lee, Jong-Ho

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 749 KB

english, 2015

32

EDS Meetings Calendar

Journal:

IEEE Electron Device Letters

Year:

2015

File:

PDF, 1.29 MB

2015

33

2015 eds jj ebers award call for nominations

Journal:

IEEE Electron Device Letters

Year:

2015

File:

PDF, 165 KB

2015

34

2016 IEEE international reliability physics symposium

Journal:

IEEE Electron Device Letters

Year:

2015

File:

PDF, 1.06 MB

2015

35

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 166 KB

english, 2015

36

IEEE Electron Device Letters publication information

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 150 KB

english, 2015

37

Contact Length Scaling in Staggered Organic Thin-Film Transistors

Wang, Hong, Wang, Wei, Sun, Pengxiao, Ma, Xiaohua, Li, Ling, Liu, Ming, Hao, Yue

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.33 MB

english, 2015

38

46th IEEE semiconductor interface specialists conference

Journal:

IEEE Electron Device Letters

Year:

2015

File:

PDF, 614 KB

2015

39

IEEE Electron Device Letters information for authors

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 39 KB

english, 2015

40

Blank page

Journal:

IEEE Electron Device Letters

Year:

2015

File:

PDF, 3 KB

2015

41

Table of contents

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 158 KB

english, 2015

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