Homogeneous NiSi1−xGex layer formation on strained SiGe...

Microelectronic Engineering 2015 / 05 Vol. 139

Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers

Liu, Linjie, Knoll, Lars, Wirths, Stephan, Xu, Dawei, Mussler, Gregor, Breuer, Uwe, Holländer, Bernhard, Di, Zengfeng, Zhang, Miao, Mantl, Siegfried, Zhao, Qing-Tai
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Volume:
139
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2015.04.083
Date:
May, 2015
File:
PDF, 2.03 MB
english, 2015
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