Reactions between Point Defects in Silicon Doped with...

Materials Science Forum 1995 Vol. 196-201

Reactions between Point Defects in Silicon Doped with Germanium

Khirunenko, L.I., Shakhovtsov, V.I., Shumov, V.V., Yashnik, V.I.
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Volume:
196-201
Year:
1995
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.196-201.1381
File:
PDF, 246 KB
1995
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