Room Temperature Defect Etching of III-V Compounds and...

Room Temperature Defect Etching of III-V Compounds and Alloys Grown on Si Substate Using Hydrogen Fluoride and Nitric Acid

Nishikawa, Hironobu, Soga, T., Jimbo, Takashi, Umeno, Masayoshi
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Volume:
196-201
Year:
1995
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.196-201.1923
File:
PDF, 673 KB
1995
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