Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid
Chang, Kuan-Chang, Tsai, Tsung-Ming, Chang, Ting-Chang, Zhang, Rui, Chen, Kai-Huang, Chen, Jung-Hui, Chen, Min-Chen, Huang, Hui-Chun, Zhang, Wei, Lin, Chih-Yang, Tseng, Yi-Ting, Lin, Hua-Ching, Zheng,Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2015.2426055
Date:
June, 2015
File:
PDF, 377 KB
english, 2015