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ALD (HfO2)x(Al2O3)1−x high-k gate dielectrics for advanced MOS devices application
H.Y. Yu, M.F. Li, D.L. KwongVolume:
462-463
Year:
2004
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2004.05.010
File:
PDF, 522 KB
english, 2004