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Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric
T.H. Ng, V. Ho, L.W. Teo, M.S. Tay, B.H. Koh, W.K. Chim, W.K. Choi, A.Y. Du, C.H. TungVolume:
462-463
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2004.05.046
File:
PDF, 524 KB
english, 2004