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The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C
L.J. Jin, K.L. Pey, W.K. Choi, E.A. Fitzgerald, D.A. Antoniadis, A.J. Pitera, M.L. Lee, D.Z. Chi, C.H. TungVolume:
462-463
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2004.05.047
File:
PDF, 986 KB
english, 2004