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A first-principles study of O2 incorporation and its diffusion in compressively strained high-density silicon oxides
Toru Akiyama, Keiichi Kawamoto, Hiroyuki Kageshima, Masashi Uematsu, Kohji Nakamura, Tomonori ItoVolume:
508
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2005.06.114
File:
PDF, 293 KB
english, 2006