Volume 508; Issue 1-2

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Thin Solid Films
Volume 508; Issue 1-2

Thin Solid Films

Volume 508; Issue 1-2

1

Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film

Masaru Itakura, Syunji Masumori, Tomohisa Ohta, Yoshitsugu Tomokiyo, Noriyuki Kuwano, Hiroshi Kanno, Taizoh Sadoh, Masanobu Miyao

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 216 KB

english, 2006

2

Influence of stacked Ge islands on the dark current–voltage characteristics and the conversion efficiency of the solar cells

Arnold Alguno, Noritaka Usami, Keisuke Ohdaira, Wugen Pan, Misumi Tayanagi, Kazuo Nakajima

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 208 KB

english, 2006

3

P doping control during SiGe:C epitaxy

Yuji Yamamoto, Bernd Tillack, Klaus Köpke, Rainer Kurps

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 125 KB

english, 2006

4

Carbon effect on strain compensation in Si1−x −yGexCy films epitaxially grown on Si(100)

Hiroaki Nitta, Junichi Tanabe, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 234 KB

english, 2006

5

Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator

M. Nishisaka, O. Shirata, D. Sakamoto, T. Enokida, H. Hagino, T. Asano

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 337 KB

english, 2006

6

Characteristics of selective epitaxial SiGe deposition processes for recessed source/drain applications

Roger Loo, Peter Verheyen, Geert Eneman, Rita Rooyackers, Frederik Leys, Denis Shamiryan, Kristin De Meyer, Philippe P. Absil, Matty Caymax

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 221 KB

english, 2006

7

δ-Doped MOS Ge/Si quantum dot/well infrared photodetector

C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, T.-H. Guo, C.W. Liu

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 238 KB

english, 2006

8

Photo detection characteristics of Si/Si1−xGex/Si p-i-n diodes integrated with optical waveguides

Atsushi Yamada, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 202 KB

english, 2006

9

Electrochemical defect revealing in thin SiGe layers

J. Werner, P. Schalberger, M. Oehme, K. Lyutovich, E. Kasper

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 169 KB

english, 2006

10

Highly drop-efficient channel-drop optical filters with Si-based photonic crystal slabs

A. Gomyo, J. Ushida, M. Shirane

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 413 KB

english, 2006

11

A first-principles study of O2 incorporation and its diffusion in compressively strained high-density silicon oxides

Toru Akiyama, Keiichi Kawamoto, Hiroyuki Kageshima, Masashi Uematsu, Kohji Nakamura, Tomonori Ito

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 293 KB

english, 2006

12

Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1−xGex epitaxial films

Hang-Sup Cho, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 172 KB

english, 2006

13

Epitaxial growth of Fe3Si/CaF2/Si(111) hybrid structures by molecular beam epitaxy

K. Kobayashi, T. Sunohara, M. Umada, H. Yanagihara, E. Kita, T. Suemasu

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 309 KB

english, 2006

14

Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion

Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, Minoru Otani, Atsushi Oshiyama

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 361 KB

english, 2006

15

Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET

Keiji Ikeda, Tatsuro Maeda, Shin-ichi Takagi

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 197 KB

english, 2006

16

Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 202 KB

english, 2006

17

Thickness-dependent stress-relaxation in thin SGOI structures and its improvement

Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 139 KB

english, 2006

18

Au-induced lateral crystallization of a-Si1−xGex (x: 0–1) at low temperature

Tomohisa Aoki, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 368 KB

english, 2006

19

Fabrication of nanocrystalline Si:H nanodot arrays with controllable porous alumina membranes

G.Q. Ding, M.J. Zheng, W.L. Xu, W.Z. Shen

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 213 KB

english, 2006

20

Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process

Tsutomu Tezuka, Yoshihiko Moriyama, Shu Nakaharai, Naoharu Sugiyama, Norio Hirashita, Eiji Toyoda, Yoshiji Miyamura, Shin-ichi Takagi

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 232 KB

english, 2006

21

Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs

Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 183 KB

english, 2006

22

1.55-μm resonant cavity enhanced photodiode based on MBE grown Ge quantum dots

J. Yu, E. Kasper, M. Oehme

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 160 KB

english, 2006

23

Photo current through SnO2/SiC/p-Si(100) structures

Syuhei Nishikawa, Hideaki Hashimoto, Motonori Chikamoto, Kosuke Horikoshi, Minoru Aoki, Kenta Arima, Junichi Uchikosi, Mizuho Morita

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 142 KB

english, 2006

24

Decay characteristics of electronic charged states of Si quantum dots as evaluated by an AFM/Kelvin probe technique

Junichiro Nishitani, Katsunori Makihara, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 303 KB

english, 2006

25

Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer

Zainal A. Burhanudin, Ratno Nuryadi, Yasuhiko Ishikawa, Michiharu Tabe

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 346 KB

english, 2006

26

Effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline Si1−x −yGexCy film deposited by ultraclean LPCVD

Hyunyoung Shim, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 147 KB

english, 2006

27

Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112)

Minjoo L. Lee, Dimitri A. Antoniadis, Eugene A. Fitzgerald

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 252 KB

english, 2006

28

Application of deconvolution to boron depth profiling in SiGe heterostructures

Ming Hong Yang, Gary G. Goodman

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 221 KB

english, 2006

29

Thermal effect on strain relaxation in Ge films epitaxially grown on Si(100) using ECR plasma CVD

Katsutoshi Sugawara, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 436 KB

english, 2006

30

Formation of microcrystalline silicon and SiNx films by electron-beam-induced-chemical vapor deposition at ultra low temperature

Tetsuya Sato, Minoru Mitsui, Junji Yamanaka, Kiyokazu Nakagawa, Yutaka Aoki, Shouji Sato, Chiharu Miyata

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 211 KB

english, 2006

31

Crystallinity and strain control growth of SiGe using ion sputtering technique

Kimihiro Sasaki, Kazuya Yoshimori

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 247 KB

english, 2006

32

Fabrication and characterization of strained Si1−yCy n-MOSFETs grown by Hot Wire Cell method

Hanae Ishihara, Tatsuro Watahiki, Akira Yamada, Makoto Konagai

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 177 KB

english, 2006

33

Structural and electrical evaluation for strained Si/SiGe on insulator

Dong Wang, Seiichiro Ii, Ken-ichi Ikeda, Hideharu Nakashima, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 289 KB

english, 2006

34

Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain

Tatsuro Maeda, Keiji Ikeda, Shu Nakaharai, Tsutomu Tezuka, Naoharu Sugiyama, Yoshihiko Moriyama, Shinichi Takagi

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 438 KB

english, 2006

35

Silicon nanotubes: Synthesis and characterization

P. Castrucci, M. Scarselli, M. De Crescenzi, M. Diociaiuti, Prajakta S. Chaudhari, C. Balasubramanian, Tejashree M. Bhave, S.V. Bhoraskar

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 379 KB

english, 2006

36

UV-laser-assisted processing of thin silicon–germanium–carbon films

E. López, S. Chiussi, J. Serra, P. González, B. León

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 603 KB

english, 2006

37

Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe

Katsunori Makihara, Jun Xu, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 424 KB

english, 2006

38

Photoluminescence properties of Si/β-FeSi2/Si double heterostructure

Kensuke Akiyama, Satoru Kaneko, Yasuo Hirabayashi, Hiroshi Funakubo

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 396 KB

english, 2006

39

Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates

M. Zhao, W.-X. Ni, P. Townsend, S.A. Lynch, D.J. Paul, C.C. Hsu, M.N. Chang

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 694 KB

english, 2006

40

Si microphotonics for optical interconnection

K. Wada, D.H. Ahn, D.R. Lim, J. Michel, L.C. Kimerling

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 239 KB

english, 2006

41

Growth mode, strain state and shape of Ge islands during their growth at different temperatures: a combined in situ GISAXS and GIXD study

M.-I. Richard, T.-U. Schülli, E. Wintersberger, G. Renaud, G. Bauer

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 292 KB

english, 2006

42

Pattern size dependence of Si1−xGex epitaxial growth for high mobility device applications

Jooyoung Lee, Hyungjun Kim, Mingqiang Bao, Kang L. Wang

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 191 KB

english, 2006

43

Growth of strain relaxed Si1−yCy on Si buffer layer by gas-source MBE

Hanae Ishihara, Masahiko Murano, Tatsuro Watahiki, Akira Yamada, Makoto Konagai, Yoshio Nakamura

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 271 KB

english, 2006

44

Suppression of atomic exchange between Ge and Si during germane adsorption on Si(001) using atomically flat surface

Yuzuru Narita, Takeshi Murata, Maki Suemitsu

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 214 KB

english, 2006

45

Artificially positioned multiply-stacked Ge dot array

Daisuke Kitayama, Takahashi Yoichi, Yoshiyuki Suda

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 263 KB

english, 2006

46

Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates

Y.Y. Zhu, R. Xu, S. Chen, Z.B. Fang, F. Xue, Y.L. Fan, X.J. Yang, Z.M. Jiang

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 316 KB

english, 2006

47

Chemical vapor phase etching of polycrystalline selective to epitaxial Si and SiGe

Yuji Yamamoto, Bernd Tillack, Klaus Köpke, Oksana Fursenko

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 189 KB

english, 2006

48

Influence of point defects on the optical properties of self-assembled Ge/Si hut clusters

T.K. Nguyen-Duc, V. Le Thanh, V. Yam, P. Boucaud, D. Bouchier, O.G. Schmidt, J. Derrien

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 267 KB

english, 2006

49

Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots

S.W. Lee, P.S. Chen, T.Y. Chien, L.J. Chen, C.T. Chia, C.W. Liu

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 537 KB

english, 2006

50

Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy

Ryo Kobayashi, Takashi Nakayama

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 375 KB

english, 2006

51

Ge dot formation using germane on a monomethylsilane-adsorbed Si(001)–2 × 1 surface

Yuzuru Narita, Takeshi Murata, Atsushi Kato, Tetsuo Endoh, Maki Suemitsu

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 140 KB

english, 2006

52

Hydrogen desorption from SiH4 adsorbed SiGe(001) surfaces

F. Hirose, Y. Kimura, M. Shinohara, M. Niwano

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 157 KB

english, 2006

53

Si1 − xGex sputter epitaxy technique and its application to RTD

Junichi Kubota, Atsushi Hashimoto, Yoshiyuki Suda

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 286 KB

english, 2006

54

Intermixing of Ge and Si during exposure of GeH4 on Si

Gen Watari, Noritaka Usami, Yoshitaro Nose, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 133 KB

english, 2006

55

Strain dependence of hole Hall mobility in compressively strained Ge channel heterostructures

Yasuhiro Abe, Hikaru Sato, Yusuke Ozawa, Kentarou Sawano, Kiyokazu Nakagawa, Yasuhiro Shiraki

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 184 KB

english, 2006

56

The role of point defects in strain relaxation in epitaxially grown SiGe structures

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 244 KB

english, 2006

57

Atomic layer processing for doping of SiGe

Bernd Tillack, Yuji Yamamoto, Detlef Bolze, Bernd Heinemann, Holger Rücker, Dieter Knoll, Junichi Murota, Wolfgang Mehr

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 160 KB

english, 2006

58

Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks

Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii, Yasushi Akasaka, Kiyomi Nakajima, Mitsuru Konno, Toyohiro Chikyow, Hiroshi Kitajima, Tsunetoshi Arikado, Yasuo Nara

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 251 KB

english, 2006

59

Epitaxy solutions for Ge MOS technology

F.E. Leys, R. Bonzom, R. Loo, O. Richard, B. De Jaeger, J. Van Steenbergen, K. Dessein, T. Conard, J. Rip, H. Bender, W. Vandervorst, M. Meuris, M. Caymax

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 217 KB

english, 2006

60

In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

H. Asaoka, T. Yamazaki, H. Yamamoto, S. Shamoto

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 161 KB

english, 2006

61

Direct formation of strained Si on insulator by laser annealing

Isao Tsunoda, Ryo Matsuura, Masanori Tanaka, Hajime Watakabe, Toshiyuki Sameshima, Masanobu Miyao

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 153 KB

english, 2006

62

Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction

Shogo Mochizuki, Akira Sakai, Noriyuki Taoka, Osamu Nakatsuka, Shingo Takeda, Shigeru Kimura, Masaki Ogawa, Shigeaki Zaima

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 577 KB

english, 2006

63

Investigation of nanocrystalline Epi-Si/γ-Al2O3 heterostructure deposited on Si substrate by spectroscopic ellipsometry

Mosammat Halima Khatun, Mohammad Shahjahan, Ryoki Ito, Kazuaki Sawada, Makoto Ishida

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 210 KB

english, 2006

64

Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates

Noriyuki Taoka, Akira Sakai, Shogo Mochizuki, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 381 KB

english, 2006

65

Strained Si channel NMOSFETs using a stress field with Si1−yCy source and drain stressors

S.T. Chang, H.-S. Tasi, C.Y. Kung

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 216 KB

english, 2006

66

Preface

Junichi Murota, Shigeaki Zaima, Masanobu Miyao

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 73 KB

english, 2006

67

Morphological change of Co-nanodot on SiO2 by thermal treatment

Koji Ueda, Taizoh Sadoh, Atsushi Kenjo, Fumiya Shoji, Kaoru Sato, Hiroyuki Kurino, Mitsumasa Koyanagi, Masanobu Miyao

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 589 KB

english, 2006

68

In-situ observation of rapid crystalline growth induced by excimer laser irradiation to Ge/Si stacked structure

A. Yamashita, Y. Okamoto, S. Higashi, S. Miyazaki, H. Watakabe, T. Sameshima

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 151 KB

english, 2006

69

Author Index of Volume 508

Journal:

Thin Solid Films

Year:

2006

File:

PDF, 49 KB

2006

70

Subject Index of Volume 508

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 188 KB

english, 2006

71

Impact of lateral and vertical scaling on the reliability of a low-complexity 200 GHz SiGe:C HBT

A. Piontek, L.J. Choi, S. Van Huylenbroeck, T. Vanhoucke, E. Hijzen, S. Decoutere

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 540 KB

english, 2006

72

High-speed germanium photodiodes monolithically integrated on silicon with MBE

M. Oehme, J. Werner, M. Jutzi, G. Wöhl, E. Kasper, M. Berroth

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 303 KB

english, 2006

73

Growth evolution of Sr-silicide layers on Si(111) and Mg2Si/Si(111) substrates

Kentaro Miura, Takuya Ohishi, Takashi Inaba, Yusuke Mizuyoshi, Noriyuki Takagi, Takashi Matsuyama, Yoshimi Momose, Tadanobu Koyama, Yasuhiro Hayakawa, Hirokazu Tatsuoka

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 253 KB

english, 2006

74

Electronic transport properties of thin, channel regions from SOI through GOI: A first-principles study

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 118 KB

english, 2006

75

Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition

Oluwamuyiwa O. Olubuyide, David T. Danielson, Lionel C. Kimerling, Judy L. Hoyt

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 1.63 MB

english, 2006

76

Consumption kinetics of Si atoms during growth and decomposition of very thin oxide on Si(001) surfaces

Shuichi Ogawa, Akitaka Yoshigoe, Shinji Ishidzuka, Yuden Teraoka, Yuji Takakuwa

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 347 KB

english, 2006

77

Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

S.Y. Chen, L.J. Chen

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 335 KB

english, 2006

78

Sub-50 nm high performance PDBFET with impact ionization

M. Born, U. Abelein, K.K. Bhuwalka, M. Schindler, M. Schmidt, A. Ludsteck, J. Schulze, I. Eisele

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 128 KB

english, 2006

79

Growth of Mg2Si1−xGex layers on silicon–germanium substrates

Yusuke Mizuyoshi, Ryuji Yamada, Takuya Ohishi, Yoshiro Saito, Tadanobu Koyama, Yasuhiro Hayakawa, Takashi Matsuyama, Hirokazu Tatsuoka

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 235 KB

english, 2006

80

Si atom wire growth for quantum information processing

Takeharu Sekiguchi, Shunji Yoshida, Kohei M. Itoh

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 238 KB

english, 2006

81

2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms

Benjamin Rössner, Hans von Känel, Daniel Chrastina, Giovanni Isella, Bertram Batlogg

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 134 KB

english, 2006

82

Annealing temperature dependence of EL properties of Si/β-FeSi2/Si(111) double-heterostructures light-emitting diodes

Y. Ugajin, M. Takauji, T. Suemasu

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 195 KB

english, 2006

83

Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy

T. Sunohara, K. Kobayashi, T. Suemasu

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 915 KB

english, 2006

84

Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy

K. Morita, Y. Inomata, T. Suemasu

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 240 KB

english, 2006

85

Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe heterostructures

Yohei Ishidora, Koji Koyama, Jun Morioka, Taroh Inada, Nobuyuki Sugii

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 224 KB

english, 2006

86

Non-selective thin SiGe strain-relaxed buffer layers: Growth and carbon-induced relaxation

Matty Caymax, Romain Delhougne, Mike Ries, Martina Luysberg, Roger Loo

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 308 KB

english, 2006

87

Doubling speed using strained Si/SiGe CMOS technology

Sarah H. Olsen, Matthew Temple, Anthony G. O'Neill, Douglas J. Paul, Sanatan Chattopadhyay, Kelvin S.K. Kwa, Luke S. Driscoll

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 174 KB

english, 2006

88

A simple approach to polytypes of SiC and its application to nanowires

Tomonori Ito, Kosuke Sano, Toru Akiyama, Kohji Nakamura

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 187 KB

english, 2006

89

Highly enhanced photoluminescence of as-anodized and electrochemically oxidized nanocrystalline p-type porous silicon treated by high-pressure water vapor annealing

B. Gelloz, N. Koshida

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 126 KB

english, 2006

90

Effect of thermal annealing on the photoluminescence of β-FeSi2 films on Si substrate

Kenji Yamaguchi, Kenichiro Shimura, Haruhiko Udono, Masato Sasase, Hiroyuki Yamamoto, Shin-ichi Shamoto, Kiichi Hojou

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 322 KB

english, 2006

91

Growth process and structure of Er/Si(100) thin film

S. Fujii, Y. Michishita, N. Miyamae, H. Suto, S. Honda, H. Okado, K. Oura, M. Katayama

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 217 KB

english, 2006

92

Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate

Junji Yamanaka, Kentaro Sawano, Kumiko Suzuki, Kiyokazu Nakagawa, Yusuke Ozawa, Takeo Hattori, Yasuhiro Shiraki

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 245 KB

english, 2006

93

Electrical properties for poly-Ge films fabricated by pulsed laser annealing

Hajime Watakabe, Toshiyuki Sameshima, Hiroshi Kanno, Masanobu Miyao

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 128 KB

english, 2006

94

Growth and characterization of short-period silicon isotope superlattices

Yasuo Shimizu, Kohei M. Itoh

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 131 KB

english, 2006

95

Strain relaxation by stripe patterning in Si/Si1 − xGex/Si(100) heterostructures

Jangwoong Uhm, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 217 KB

english, 2006

96

Field-emission properties of self-assembled Si-capped Ge quantum dots

S.W. Lee, Y.L. Chueh, H.C. Chen, L.J. Chen, P.S. Chen, L.J. Chou, C.W. Liu

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 498 KB

english, 2006

97

Strain relaxation processes in strained-Si layer on SiGe-on-insulator substrates

Norio Hirashita, Naoharu Sugiyama, Eiji Toyoda, Shin-ichi Takagi

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 295 KB

english, 2006

98

Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates

S. Van Elshocht, M. Caymax, T. Conard, S. De Gendt, I. Hoflijk, M. Houssa, F. Leys, R. Bonzom, B. De Jaeger, J. Van Steenbergen, W. Vandervorst, M. Heyns, M. Meuris

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 214 KB

english, 2006

99

The challenges in guided self-assembly of Ge and InAs quantum dots on Si

Z.M. Zhao, T.S. Yoon, W. Feng, B.Y. Li, J.H. Kim, J. Liu, O. Hulko, Y.H. Xie, H.M. Kim, K.B. Kim, H.J. Kim, K.L. Wang, C. Ratsch, R. Caflisch, D.Y. Ryu, T.P. Russell

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 493 KB

english, 2006

100

Surfactant-mediated epitaxy of high-quality low-doped relaxed germanium films on silicon (001)

Tobias F. Wietler, Eberhard Bugiel, Karl R. Hofmann

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 249 KB

english, 2006

101

Determination of lattice parameters of SiGe/Si(110) heterostructures

Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Shinji Koh, Noritaka Usami

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 414 KB

english, 2006

102

Strain field and related roughness formation in SiGe relaxed buffer layers

K. Sawano, N. Usami, K. Arimoto, K. Nakagawa, Y. Shiraki

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 409 KB

english, 2006

103

Interdiffusion at Si/SiGe interface analyzed by high-resolution X-ray diffraction

Shuqi Zheng, M. Kawashima, M. Mori, T. Tambo, C. Tatsuyama

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 528 KB

english, 2006

104

A single-chip two-wavelength switchable strained Si1−xGex/Si-quantum-well LED

Nozomu Yasuhara, S. Fukatsu

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 169 KB

english, 2006

105

Diminished Shockley–Read–Hall recombination in near-surface pseudomorphic Si1−xGex/Si double quantum wells

Y. Sugawara, N. Nakajima, S. Fukatsu

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 333 KB

english, 2006

106

Editorial Board

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 62 KB

english, 2006

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