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Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion
Masashi Uematsu, Hiroyuki Kageshima, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, Minoru Otani, Atsushi OshiyamaVolume:
508
Year:
2006
Language:
english
Pages:
6
DOI:
10.1016/j.tsf.2005.06.118
File:
PDF, 361 KB
english, 2006