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Thermal effect on strain relaxation in Ge films epitaxially grown on Si(100) using ECR plasma CVD
Katsutoshi Sugawara, Masao Sakuraba, Junichi MurotaVolume:
508
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2005.07.332
File:
PDF, 436 KB
english, 2006