Growth of strain relaxed Si1−yCy on Si buffer layer by...

Thin Solid Films 2006 Vol. 508; Iss. 1-2

Growth of strain relaxed Si1−yCy on Si buffer layer by gas-source MBE

Hanae Ishihara, Masahiko Murano, Tatsuro Watahiki, Akira Yamada, Makoto Konagai, Yoshio Nakamura
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Volume:
508
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2005.08.386
File:
PDF, 271 KB
english, 2006
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