Thermal annihilation process of stacking-fault tetrahedron...

Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy

Ryo Kobayashi, Takashi Nakayama
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Volume:
508
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2005.08.399
File:
PDF, 375 KB
english, 2006
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