Ge dot formation using germane on a...

Thin Solid Films 2006 Vol. 508; Iss. 1-2

Ge dot formation using germane on a monomethylsilane-adsorbed Si(001)–2 × 1 surface

Yuzuru Narita, Takeshi Murata, Atsushi Kato, Tetsuo Endoh, Maki Suemitsu
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Volume:
508
Year:
2006
Language:
english
Pages:
3
DOI:
10.1016/j.tsf.2005.08.400
File:
PDF, 140 KB
english, 2006
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