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Strained Si channel NMOSFETs using a stress field with Si1−yCy source and drain stressors
S.T. Chang, H.-S. Tasi, C.Y. KungVolume:
508
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2005.09.197
File:
PDF, 216 KB
english, 2006