Vacancy Type Defects inGaAs After Electron Irradiation...

Materials Science Forum 1995 Vol. 196-201

Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy

Polity, A., Nagel, C., Krause-Rehberg, R.
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Volume:
196-201
Year:
1995
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.196-201.1249
File:
PDF, 409 KB
1995
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