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Structure and properties of Ti–Si–N films with ∼ 10 at.% Si deposited using reactive magnetron sputtering with high-flux low-energy ion assistance
Z.G. Li, S. Miyake, M. Makino, Y.X. WuVolume:
516
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.tsf.2007.11.026
File:
PDF, 648 KB
english, 2008