Influence of the GaAs substrate orientation on the composition of GaxIn1 − xP (x ≈ 0.5) grown by LPE and MOCVD
V.A. Mishurnyi, F. de Anda, A.Yu. Gorbatchev, Yu. Kudriavtsev, V.A. Elyukhin, T. Prutskij, C. Pelosi, C. Bocchi, B.Y. Ber, F.E. Ortiz VazquezVolume:
516
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2008.04.018
File:
PDF, 288 KB
english, 2008