P+/n junction leakage in thin selectively grown Ge-in-STI substrates
G. Eneman, R. Yang, G. Wang, B. De Jaeger, R. Loo, C. Claeys, M. Caymax, M. Meuris, M.M. Heyns, E. SimoenVolume:
518
Year:
2010
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2009.09.123
File:
PDF, 572 KB
english, 2010