Volume 518; Issue 9

Main
Thin Solid Films
Volume 518; Issue 9

Thin Solid Films

Volume 518; Issue 9

1

Influence of O contamination and Au cluster properties on the structural features of Si nanowires

Emanuele F. Pecora, Alessia Irrera, Francesco Priolo

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 527 KB

english, 2010

2

Characterization of Arsenic segregation at Si/SiO2 interface by 3D atom probe tomography

M. Ngamo, S. Duguay, P. Pichler, K. Daoud, P. Pareige

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 1.14 MB

english, 2010

3

Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures

A. Wolfsteller, N. Geyer, T.-K. Nguyen-Duc, P. Das Kanungo, N.D. Zakharov, M. Reiche, W. Erfurth, H. Blumtritt, S. Kalem, P. Werner, U. Gösele

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 1.35 MB

english, 2010

4

Atomic-scale study of the role of carbon on boron clustering

T. Philippe, S. Duguay, J.J. Grob, D. Mathiot, D. Blavette

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 518 KB

english, 2010

5

Si versus Ge for future microelectronics

C. Claeys, J. Mitard, G. Eneman, M. Meuris, E. Simoen

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 1.44 MB

english, 2010

6

Development of analytical model for strained silicon relaxation on (100) fully relaxed Si0.8Ge0.2 pseudo-substrates

C. Figuet, O. Kononchuk

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 391 KB

english, 2010

7

Interaction of point defects with impurities in the Si–SiO2 system and its influence on the properties of the interface

D. Kropman, E. Mellikov, A. Öpik, K. Lott, T. Kärner, I. Heinmaa, T. Laas, A. Medvid, W. Skorupa, S. Prucnal, L. Rebohle, S. Zvyagin, E. Cizmar, M. Ozerov, J. Wosnitza

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 540 KB

english, 2010

8

Interdiffusion and growth of chromium silicide at the interface of Cr/Si(As) system during rapid thermal annealing

H. Benkherbache, A. Merabet

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 423 KB

english, 2010

9

P+/n junction leakage in thin selectively grown Ge-in-STI substrates

G. Eneman, R. Yang, G. Wang, B. De Jaeger, R. Loo, C. Claeys, M. Caymax, M. Meuris, M.M. Heyns, E. Simoen

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 572 KB

english, 2010

10

325 nm-laser-excited micro-photoluminescence for strained Si films

Dong Wang, Haigui Yang, Tokuhide Kitamura, Hiroshi Nakashima

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 679 KB

english, 2010

11

Majority carrier capture rates for transition metal impurities in germanium

J. Lauwaert, P. Clauws

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 377 KB

english, 2010

12

Electrical properties of nitrogen-doped Float-Zoned silicon annealed in a range of 200 to 900 °C

G.I. Voronkova, A.V. Batunina, V.V. Voronkov, R. Falster, V.N. Golovina, A.S. Guliaeva, N.B. Tiurina

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 364 KB

english, 2010

13

Correlated out-diffusion of nitrogen and in-diffusion of self-interstitials resulting in elimination of nitrogen-related deep centres

V.V. Voronkov, R. Falster

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 356 KB

english, 2010

14

Low-frequency noise assessment of the silicon passivation of Ge pMOSFETs

E. Simoen, A. Firrincieli, F. Leys, R. Loo, B. De Jaeger, J. Mitard, C. Claeys

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 801 KB

english, 2010

15

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Jiahe Chen, Xiangyang Ma, Deren Yang

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 1.07 MB

english, 2010

16

Defect introduction in Ge during inductively coupled plasma etching and Schottky barrier diode fabrication processes

F.D. Auret, S.M.M. Coelho, G. Myburg, P.J. Janse van Rensburg, W.E. Meyer

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 203 KB

english, 2010

17

Theory of defects in Si and Ge: Past, present and recent developments

S.K. Estreicher, D. Backlund, T.M. Gibbons

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 339 KB

english, 2010

18

Equilibrium segregation coefficient and solid solubility of B in Czochralski Ge crystal growth

Toshinori Taishi, Yutaka Ohno, Ichiro Yonenaga

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 333 KB

english, 2010

19

Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

G. Wang, R. Loo, S. Takeuchi, L. Souriau, J.C. Lin, A. Moussa, H. Bender, B. De Jaeger, P. Ong, W. Lee, M. Meuris, M. Caymax, W. Vandervorst, B. Blanpain, M.M. Heyns

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 564 KB

english, 2010

20

Germanium on insulator near-infrared photodetectors fabricated by layer transfer

V. Sorianello, A. De Iacovo, L. Colace, G. Assanto, D. Fulgoni, L. Nash, M. Palmer

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 532 KB

english, 2010

21

Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

J.C. Conde, E. Martín, F. Gontad, S. Chiussi, L. Fornarini, B. León

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 2.61 MB

english, 2010

22

Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution

G. Bisognin, S. Vangelista, M. Mastromatteo, E. Napolitani, D. De Salvador, A. Carnera, M. Berti, E. Bruno, G. Scapellato, A. Terrasi

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 449 KB

english, 2010

23

Formation of germanates on germanium by chemical vapor treatment

Seref Kalem, Örjan Arthursson, Igor Romandic

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 1.33 MB

english, 2010

24

Honeycomb voids due to ion implantation in germanium

R.J. Kaiser, S. Koffel, P. Pichler, A.J. Bauer, B. Amon, A. Claverie, G. Benassayag, P. Scheiblin, L. Frey, H. Ryssel

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 563 KB

english, 2010

25

Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy

A. Fissel, R. Dargis, E. Bugiel, D. Schwendt, T. Wietler, J. Krügener, A. Laha, H.J. Osten

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 864 KB

english, 2010

26

Non-melting annealing of silicon by CO2 laser

A. Florakis, E. Verrelli, D. Giubertoni, G. Tzortzis, D. Tsoukalas

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 476 KB

english, 2010

27

Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs

E.M. Bazizi, A. Pakfar, P.F. Fazzini, F. Cristiano, C. Tavernier, A. Claverie, N. Zographos, C. Zechner, E. Scheid

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 796 KB

english, 2010

28

Overlayer stress effects on defect formation in Si and Ge

Nick E.B. Cowern, Nick S. Bennett, Chihak Ahn, Joo Chul Yoon, Silke Hamm, Wilfried Lerch, Hamid Kheyrandish, Filadelfo Cristiano, Ardechir Pakfar

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 972 KB

english, 2010

29

Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 °C by rf-PECVD

M. Labrune, M. Moreno, P. Roca i Cabarrocas

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 486 KB

english, 2010

30

Molecular dynamics simulation of silicon oxidization

Patrick Ganster, Guy Tréglia, Frédéric Lancon, Pascal Pochet

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 1.15 MB

english, 2010

31

Hydrogen in amorphous Si and Ge during solid phase epitaxy

B.C. Johnson, P. Caradonna, D.J. Pyke, J.C. McCallum, P. Gortmaker

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 830 KB

english, 2010

32

Efficient relaxation of strained-SiGe layers induced by thermal oxidation

J.H. Jang, S.Y. Son, W. Lim, M.S. Phen, K. Siebein, V. Craciun

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 773 KB

english, 2010

33

Ordered Ge-dot arrays in a Si-waveguide for 1.5 µm detectors

Ventsislav Lavchiev, Gang Chen, Wolfgang Jantsch

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 458 KB

english, 2010

34

Structural study of Si1 − xGex nanocrystals embedded in SiO2 films

S.R.C. Pinto, R.J. Kashtiban, A.G. Rolo, M. Buljan, A. Chahboun, U. Bangert, N.P. Barradas, E. Alves, M.J.M. Gomes

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 815 KB

english, 2010

35

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

V.R. D'Costa, Y.-Y. Fang, J. Tolle, J. Kouvetakis, J. Menéndez

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 607 KB

english, 2010

36

Future challenges in CMOS process modeling

P. Pichler, A. Burenkov, J. Lorenz, C. Kampen, L. Frey

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 696 KB

english, 2010

37

Dopant diffusion and activation induced by sub-melt laser anneal within the co-implanted p+ polycrystalline silicon gate used in CMOS technologies

A. Colin, P. Morin, R. Beneyton, Luc Pinzelli, D. Mathiot, E. Fogarassy

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 611 KB

english, 2010

38

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

B.C. Johnson, J.C. McCallum, L.H. Willems van Beveren, E. Gauja

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 504 KB

english, 2010

39

Effect of Si and He implantation in the formation of ultra shallow junctions in Si

M. Xu, G. Regula, R. Daineche, E. Oliviero, B. Hakim, E. Ntsoenzok, B. Pichaud

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 341 KB

english, 2010

40

Synthesis of strained SiGe on Si(100) by pulsed laser induced epitaxy

T. Kociniewski, F. Fossard, J. Boulmer, D. Bouchier

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 460 KB

english, 2010

41

Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET

J. Moers, J. Gerharz, G. Rinke, G. Mussler, St. Trellenkamp, D. Grützmacher

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 475 KB

english, 2010

42

Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing

D. Sahin, I. Yildiz, A.I. Gencer, G. Aygun, A. Slaoui, R. Turan

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 521 KB

english, 2010

43

Formation of uniaxially strained SiGe by selective ion implantation technique

Kentarou Sawano, Yusuke Hoshi, Atsunori Yamada, Yoshiyasu Hiraoka, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, Yasuhiro Shiraki

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 637 KB

english, 2010

44

I–V and low frequency noise characterization of poly and amorphous silicon Ti- and Co-salicide resistors

J. Raoult, F. Pascal, C. Leyris

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 278 KB

english, 2010

45

Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate

S. Duguay, M. Ngamo, P.F. Fazzini, F. Cristiano, K. Daoud, P. Pareige

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 922 KB

english, 2010

46

Dopant incorporation in thin strained Si layers implanted with Sb

A.Yu. Azarov, A. Zamani, H.H. Radamson, L. Vines, A.Yu. Kuznetsov, A. Hallén

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 427 KB

english, 2010

47

Tensile strain engineering of Si thin films using porous Si substrates

A. Boucherif, N.P. Blanchard, P. Regreny, O. Marty, G. Guillot, G. Grenet, V. Lysenko

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 1.01 MB

english, 2010

48

Effects of tunnel oxide process on SONOS flash memory characteristics

Dong Hua Li, Il Han Park, Jang-Gn Yun, Byung-Gook Park

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 680 KB

english, 2010

49

Electronic structural details of donor–vacancy complexes in Si-doped Ge and Ge-doped Si

J. Coutinho, F. Castro, V.J.B. Torres, A. Carvalho, M. Barroso, P.R. Briddon

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 504 KB

english, 2010

50

Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration

Thomas Canneaux, Daniel Mathiot, Jean-Pierre Ponpon, Yann Leroy

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 469 KB

english, 2010

51

Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium

P.F. Fazzini, F. Cristiano, E. Talbot, G. Ben Assayag, S. Paul, W. Lerch, A. Pakfar, J.M. Hartmann

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 703 KB

english, 2010

52

Radiation enhanced diffusion of B in crystalline Ge

E. Bruno, S. Mirabella, G. Scapellato, G. Impellizzeri, A. Terrasi, F. Priolo, E. Napolitani, D. De Salvador, M. Mastromatteo, A. Carnera

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 302 KB

english, 2010

53

Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions

Haigui Yang, Dong Wang, Hiroshi Nakashima, Kana Hirayama, Satoshi Kojima, Shogo Ikeura

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 572 KB

english, 2010

54

Observation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonance

A.P.D. Nguyen, A. Stesmans, V.V. Afanas'ev, R.R. Lieten, G. Borghs

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 286 KB

english, 2010

55

First-principles study of near surface point defects stability in Si (100) and SiGe(100)

S. Fetah, A. Chikouche, A. Dkhissi, A. Estève, M. Djafari Rouhani, G. Landa, P. Pochet

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 639 KB

english, 2010

56

Divacancies at room temperature in germanium

J. Slotte, K. Kuitunen, S. Kilpeläinen, F. Tuomisto, I. Capan

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 258 KB

english, 2010

57

Thermally activated conduction mechanisms in Silicon Nitride MIS structures

A. Kanapitsas, C. Tsonos, D. Triantis, I. Stavrakas, C. Anastasiadis, P. Photopoulos, P. Pissis, V. Em. Vamvakas

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 389 KB

english, 2010

58

Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures

P. Castrillo, M. Jaraiz, R. Pinacho, J.E. Rubio

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 850 KB

english, 2010

59

Sub-threshold study of undoped trigate nFinFET

G.C. Tettamanzi, G.P. Lansbergen, A. Paul, S. Lee, P.A. Deosarran, N. Collaert, G. Klimeck, S. Biesemans, S. Rogge

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 448 KB

english, 2010

60

Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers

Kana Hirayama, Wataru Kira, Keisuke Yoshino, Haigui Yang, Dong Wang, Hiroshi Nakashima

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 467 KB

english, 2010

61

Effects of electron irradiation on SiGe devices

H. Ohyama, T. Nagano, K. Takakura, M. Motoki, K. Matsuo, H. Nakamura, M. Sawada, S. Kuboyama, M.B. Gonzalez, E. Simoen, G. Eneman, C. Claeys

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 718 KB

english, 2010

62

Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys

M. Michaillat, D. Rideau, F. Aniel, C. Tavernier, H. Jaouen

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 492 KB

english, 2010

63

Device performance of p-Ge MOSFETs at liquid nitrogen temperature

H. Ohyama, H. Sukizaki, K. Takakura, M. Motoki, K. Matsuo, H. Nakamura, M. Sawada, Midorikawa, S. Kuboyama, B. De Jaeger, E. Simoen, C. Claeys

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 654 KB

english, 2010

64

Symposium I: Silicon and germanium issues for future CMOS devices

Lourdes Pelaz, Salvo Mirabella, Arne Nylandsted Larsen

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 83 KB

english, 2010

65

Subject Index

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 130 KB

english, 2010

66

Author Index

Journal:

Thin Solid Films

Year:

2010

File:

PDF, 79 KB

2010

67

Amorphization, recrystallization and end of range defects in germanium

A. Claverie, S. Koffel, N. Cherkashin, G. Benassayag, P. Scheiblin

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 1.00 MB

english, 2010

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски