Defect introduction in Ge during inductively coupled plasma...

Thin Solid Films 2010 Vol. 518; Iss. 9

Defect introduction in Ge during inductively coupled plasma etching and Schottky barrier diode fabrication processes

F.D. Auret, S.M.M. Coelho, G. Myburg, P.J. Janse van Rensburg, W.E. Meyer
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Volume:
518
Year:
2010
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2009.09.130
File:
PDF, 203 KB
english, 2010
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