Transfer of physically-based models from process to device...

Thin Solid Films 2010 Vol. 518; Iss. 9

Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs

E.M. Bazizi, A. Pakfar, P.F. Fazzini, F. Cristiano, C. Tavernier, A. Claverie, N. Zographos, C. Zechner, E. Scheid
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Volume:
518
Year:
2010
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2009.09.141
File:
PDF, 796 KB
english, 2010
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