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Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors
V.R. D'Costa, Y.-Y. Fang, J. Tolle, J. Kouvetakis, J. MenéndezVolume:
518
Year:
2010
Language:
english
Pages:
7
DOI:
10.1016/j.tsf.2009.09.149
File:
PDF, 607 KB
english, 2010