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Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET
J. Moers, J. Gerharz, G. Rinke, G. Mussler, St. Trellenkamp, D. GrützmacherVolume:
518
Year:
2010
Language:
english
Pages:
4
DOI:
10.1016/j.tsf.2009.09.155
File:
PDF, 475 KB
english, 2010