Improving Doping Efficiency of P+ Implanted Ions in 4H-SiC

Materials Science Forum 2011 / 3 Vol. 679-680

Improving Doping Efficiency of P+ Implanted Ions in 4H-SiC

Nipoti, Roberta, Nath, A., Cristiani, Stefano, Sanmartin, Michele, Rao, Mulpuri V.
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Volume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.679-680.393
Date:
March, 2011
File:
PDF, 606 KB
english, 2011
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