TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
Adachi, Kazuhiro, Johnson, C. Mark, Arai, Kazuo, Fukuda, Kenji, Harada, Shinsuke, Shinohe, TakashiVolume:
389-393
Year:
2002
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.389-393.1085
File:
PDF, 315 KB
2002