Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide

Materials Science Forum 2002 Vol. 389-393

Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide

Williams, John R., Chung, G.Y., Tin, Chin Che, McDonald, K., Farmer, D., Chanana, R.K., Weller, Robert A., Pantelides, Sokrates T., Holland, O.W., Das, Mrinal K., Feldman, Leonard C.
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Volume:
389-393
Year:
2002
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.389-393.967
File:
PDF, 442 KB
2002
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