In situ growth monitoring of AlGaN/GaN...

Journal of Semiconductors 2010 / 09 Vol. 31; Iss. 9

In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser

Feng, Wen, Lirong, Huang, Bo, Jiang, Liangzhu, Tong, Wei, Xu, Deming, Liu
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Volume:
31
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/31/9/094010
Date:
September, 2010
File:
PDF, 531 KB
english, 2010
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