Volume 31; Issue 9

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Journal of Semiconductors
Volume 31; Issue 9

Journal of Semiconductors

Volume 31; Issue 9

1

A dual-band frequency synthesizer for CMMB application with low phase noise

Peng, Yu, Jun, Yan, Yin, Shi, Foster, Dai Fa

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 523 KB

english, 2010

2

A novel high voltage start up circuit for an integrated switched mode power supply

Hao, Hu, Xingbi, Chen

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 204 KB

english, 2010

3

In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser

Feng, Wen, Lirong, Huang, Bo, Jiang, Liangzhu, Tong, Wei, Xu, Deming, Liu

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 531 KB

english, 2010

4

A 1.25 Gb/s laser diode driver with pulse width optimization

Huan, Wang, Zhigong, Wang, Jian, Xu, Rong, Wang, Peng, Miao, Yin, Luo

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 846 KB

english, 2010

5

A high precision high PSRR bandgap reference with thermal hysteresis protection

Yintang, Yang, Yani, Li, Zhangming, Zhu

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 313 KB

english, 2010

6

Design and verification of a 10-bit 1.2-V 100-MSPS D/A IP core based on a 0.13-μm low power CMOS process

Bulu, Xu, Bowen, Shao, Xia, Lin, Wei, Yi, Yun, Liu

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 2.45 MB

english, 2010

7

Analytical charge control model for AlGaN/GaN MIS-HFETs including an undepleted barrier layer

Shenghui, Lu, Jiangfeng, Du, Qian, Luo, Qi, Yu, Wei, Zhou, Jianxin, Xia, Mohua, Yang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 534 KB

english, 2010

8

A 10-bit 100-Msps low power time-interleaved ADC using OTA sharing

Lai, Xu, Xiumei, Yin, Huazhong, Yang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 507 KB

english, 2010

9

A Ga-doped ZnO transparent conduct layer for GaN-based LEDs

Zhen, Liu, Xiaofeng, Wang, Hua, Yang, Yao, Duan, Yiping, Zeng

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 901 KB

english, 2010

10

An 8-bit 180-kS/s differential SAR ADC with a time-domain comparator and 7.97-ENOB

Hua, Fan, Qi, Wei, Bomeh, Kobenge Sekedi, Xiumei, Yin, Huazhong, Yang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 5.06 MB

english, 2010

11

Sigma–delta modulator modeling analysis and design

Binjie, Ge, Xin'an, Wang, Xing, Zhang, Xiaoxing, Feng, Qingqin, Wang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 201 KB

english, 2010

12

Deep submicron PDSOI thermal resistance extraction

Jianhui, Bu, Jinshun, Bi, Linmao, Xi, Zhengsheng, Han

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 434 KB

english, 2010

13

A reconfigurable OTA-C baseband filter with wide digital tuning for GNSS receivers

Wenguang, Pan, Chengyan, Ma, Yebing, Gan, Tianchun, Ye

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 183 KB

english, 2010

14

Soft error generation analysis in combinational logic circuits

Qian, Ding, Yu, Wang, Rong, Luo, Hui, Wang, Huazhong, Yang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 244 KB

english, 2010

15

Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAs InP-based HEMT

Jie, Huang, Tianyi, Guo, Haiying, Zhang, Jingbo, Xu, Xiaojun, Fu, Hao, Yang, Jiebin, Niu

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 377 KB

english, 2010

16

Phonon-induced magnetoresistance oscillations in a high-mobility quantum well

Qisheng, Zhou, Juncheng, Cao, Ming, Qi, Xiaolin, Lei

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 429 KB

english, 2010

17

A low power automatic gain control loop for a receiver

Guofeng, Li, Zhiqing, Geng, Nanjian, Wu

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 210 KB

english, 2010

18

Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices

Shifeng, Zhang, Koubao, Ding, Yan, Han, Chenggong, Han, Jiaxian, Hu, Bin, Zhang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 603 KB

english, 2010

19

A 1.2-V 19.2-mW 10-bit 30-MS/s pipelined ADC in 0.13-μm CMOS

Zhang, Zhang, Yudan, Yuan, Yawei, Guo, Xu, Cheng, Xiaoyang, Zeng

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 1.09 MB

english, 2010

20

A 0.5–1.7 GHz low phase noise ring-oscillator-based PLL for mixed-signal SoCs

Yishu, Jiao, Yumei, Zhou, Jianhua, Jiang, Bin, Wu

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 2.00 MB

english, 2010

21

Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes

Xiaoli, Ji, Fuhua, Yang, Junxi, Wang, Ruifei, Duan, Kai, Ding, Yiping, Zeng, Guohong, Wang, Jinmin, Li

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 700 KB

english, 2010

22

Two-dimensional pixel image lag simulation and optimization in a 4-T CMOS image sensor

Junting, Yu, Binqiao, Li, Pingping, Yu, Jiangtao, Xu, Cun, Mou

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 70 KB

english, 2010

23

A 3–5 GHz BPSK transmitter for IR-UWB in 0.18 μm CMOS

Delong, Fu, Lu, Huang, Li, Cai, Fujiang, Lin

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 429 KB

english, 2010

24

Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology

Yue, Xu, Feng, Yan, Zhiguo, Li, Fan, Yang, Yonggang, Wang, Jianguang, Chang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 209 KB

english, 2010

25

Numerical study of the sub-threshold slope in T-CNFETs

Hailiang, Zhou, Yue, Hao, Minxuan, Zhang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 441 KB

english, 2010

26

Frequency of the transition spectral line of an electron in quantum rods

Guiwen, Wang, Jingling, Xiao

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 2.03 MB

english, 2010

27

Epitaxial growth of ZnO on GaN/sapphire substrate by radio-frequency magnetron sputtering

Xiaoli, Yang, Nuofu, Chen, Zhigang, Yin, Xingwang, Zhang, Yang, Li, Jingbi, You, Yu, Wang, Jingjing, Dong, Min, Cui, Yun, Gao, Tianmao, Huang, Xiaofeng, Chen, Yanshuo, Wang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 695 KB

english, 2010

28

Ultra high-speed InP/InGaAs SHBTs with /t and/ max of 185 GHz

Lei, Zhou, Zhi, Jin, Yongbo, Su, Xiantai, Wang, Hudong, Chang, Anhuai, Xu, Ming, Qi

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 1.48 MB

english, 2010

29

A 6–9 GHz ultra-wideband CMOS PA for China's ultra-wideband standard

Zhendong, Gao, Zhiqiang, Li, Haiying, Zhang

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 418 KB

english, 2010

30

A 2-GS/s 6-bit self-calibrated flash ADC

Youtao, Zhang, Xiaopeng, Li, Min, Zhang, Ao, Liu, Chen, Chen

Journal:

Journal of Semiconductors

Year:

2010

Language:

english

File:

PDF, 579 KB

english, 2010