Investigation of Surface and Interface Morphology of...

Materials Science Forum 2011 / 3 Vol. 679-680

Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates

Hosoi, Takuji, Konzono, Kohei, Uenishi, Yusuke, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Shimura, Takayoshi, Watanabe, Heiji
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Volume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.679-680.342
Date:
March, 2011
File:
PDF, 4.32 MB
english, 2011
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