Compositional changes in the channel layer of an amorphous...

Semiconductor Science and Technology 2012 / 06 Vol. 27; Iss. 6

Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing

Kang, Jiyeon, Lee, Su Jeong, Kim, Chul-Hong, Chae, Gee Sung, Jun, Myungchul, Hwang, Yong Kee, Lee, Woong, Myoung, Jae-Min
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Volume:
27
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/27/6/065002
Date:
June, 2012
File:
PDF, 958 KB
english, 2012
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