Investigation of plasma-oxidized aluminium as a gate...

Semiconductor Science and Technology 2012 / 06 Vol. 27; Iss. 6

Investigation of plasma-oxidized aluminium as a gate dielectric for AlGaN/GaN MISHFETs

Hahn, Herwig, Alam, Assadullah, Heuken, Michael, Kalisch, Holger, Vescan, Andrei
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
27
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/27/6/062001
Date:
June, 2012
File:
PDF, 427 KB
english, 2012
Conversion to is in progress
Conversion to is failed