Effect of Inter-Well Coupling between 3C and 6H in-Grown...

Materials Science Forum 2011 / 3 Vol. 679-680

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Robert, Teddy, Marinova, Maya, Juillaguet, Sandrine, Henry, Anne, Polychroniadis, Efstathios K., Camassel, Jean
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Volume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.679-680.314
Date:
March, 2011
File:
PDF, 500 KB
english, 2011
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