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Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET
Pardeshi, Hemant, Pati, Sudhansu Kumar, Raj, Godwin, Mohankumar, N, Sarkar, Chandan KumarVolume:
33
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/33/12/124001
Date:
December, 2012
File:
PDF, 367 KB
english, 2012