Volume 33; Issue 12

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Journal of Semiconductors
Volume 33; Issue 12

Journal of Semiconductors

Volume 33; Issue 12

1

A RF receiver frontend for SC-UWB in a 0.18-μm CMOS process

Guo, Rui, Zhang, Haiying

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 1.93 MB

english, 2012

2

Design and analysis of a bang—bang PLL for 6.25 Gbps SerDes

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 2.62 MB

english, 2012

3

A novel method to analyze the contact resistance effect on OTFTs

Chen, Jinhuo, Hu, Jiaxing, Zhu, Yunlong

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 1.07 MB

english, 2012

4

A process/temperature variation tolerant RSSI

Lei, Qianqian, Lin, Min, Shi, Yin

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 1.04 MB

english, 2012

5

A digitally controlled power amplifier with neutralization capacitors for Zigbee™ applications

Jia, Fei, Diao, Shengxi, Zhang, Xuejuan, Fu, Zhongqian, Lin, Fujiang

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 1000 KB

english, 2012

6

Prediction of semiconducting behavior in minority spin of Co 2 CrZ (Z = Ga, Ge, As): LSDA

Rai, D. P., Thapa, R. K.

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 2.96 MB

english, 2012

7

Full well capacity and quantum efficiency optimization for small size backside illuminated CMOS image pixels with a new photodiode structure

Sun, Yu, Zhang, Ping, Xu, Jiangtao, Gao, Zhiyuan, Xu, Chao

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 385 KB

english, 2012

8

A reconfigurable complex band-pass filter with improved passive compensation

Fan, Chaojie, Mo, Tingting, Chen, Dongpo, Zhou, Jianjun

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 507 KB

english, 2012

9

Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET

Pardeshi, Hemant, Pati, Sudhansu Kumar, Raj, Godwin, Mohankumar, N, Sarkar, Chandan Kumar

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 367 KB

english, 2012

10

N + P photodetector characterization using the quasi-steady state photoconductance decay method

Esebamen, Omeime Xerviar

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 761 KB

english, 2012

11

A high linearity current mode multiplier/divider with a wide dynamic range

Liao, Pengfei, Luo, Ping, Zhang, Bo, Li, Zhaoji

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 711 KB

english, 2012

12

A digital prediction algorithm for a single-phase boost PFC

Wang, Qing, Chen, Ning, Sun, Weifeng, Lu, Shengli, Shi, Longxing

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 606 KB

english, 2012

13

High peak-to-valley current ratio In 0.53 Ga 0.47 As/AlAs resonant tunneling diode with a high doping emitter

Wang, Wei, Sun, Hao, Teng, Teng, Sun, Xiaowei

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 513 KB

english, 2012

14

A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique

Yang, Geliang, Wang, Zhigong, Li, Zhiqun, Li, Qin, Li, Zhu, Liu, Faen

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 1.29 MB

english, 2012

15

Significantly enhanced transmission achieved with double-layered metallic aperture arrays with sub-skin-depth Ag film

Xiao, Gongli, Yang, Hongyan

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 1.08 MB

english, 2012

16

Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs

Lee, Jung-Hee, Lee, Jong-Ho, Jin, Xiaoshi, Liu, Xi, Wu, Meile, Chuai, Rongyan

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 545 KB

english, 2012

17

A 72-dB-SNDR rail-to-rail successive approximation ADC using mismatch calibration techniques

Liu, Yan, Hua, Siliang, Wang, Donghui, Hou, Chaohuan

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 629 KB

english, 2012

18

Charge transfer efficiency improvement of a 4-T pixel by the optimization of electrical potential distribution under the transfer gate

Li, Yiqiang, Li, Binqiao, Xu, Jiangtao, Gao, Zhiyuan, Xu, Chao, Sun, Yu

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 1.03 MB

english, 2012

19

An empirical formula for yield estimation from singly truncated performance data of qualified semiconductor devices

Liang, Tao, Jia, Xinzhang

Journal:

Journal of Semiconductors

Year:

2012

Language:

english

File:

PDF, 619 KB

english, 2012

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