Corrigendum: Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric
Lachab, M, Sultana, M, Fatima, H, Adivarahan, V, Fareed, Q, Khan, M AVolume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/2/029501
Date:
February, 2013
File:
PDF, 106 KB
english, 2013