Scavenging effect on plasma oxidized Gd 2 O 3 grown by high pressure sputtering on Si and InP substrates
Pampillón, M A, Feijoo, P C, San Andrés, E, García, H, Castán, H, Dueñas, SVolume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/3/035023
Date:
March, 2015
File:
PDF, 629 KB
english, 2015