Volume 30; Issue 3

Semiconductor Science and Technology

Volume 30; Issue 3

1

Investigation on P-N dual acceptor doped p-type ZnO thin films and subsequent growth of pencil-like nanowires

Amiruddin, R, Devasia, Sebin, Mohammedali, D K, Santhosh Kumar, M C

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.82 MB

english, 2015

2

Improvement of breakdown and current collapse characteristics of GaN HEMT with a polarization-graded AlGaN buffer

Li, Chuanhao, Li, Zhonghui, Peng, Daqing, Ni, Jinyu, Pan, Lei, Zhang, Dongguo, Dong, Xun, Kong, Yuechan

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.16 MB

english, 2015

3

Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots

Kim, Yeongho, Ban, Keun-Yong, Kuciauskas, Darius, Dippo, Patricia C, Honsberg, Christiana B

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.19 MB

english, 2015

4

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

Šermukšnis, E, Liberis, J, Matulionis, A, Avrutin, V, Ferreyra, R, Özgür, Ü, Morkoç, H

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 486 KB

english, 2015

5

Ion beam irradiation of nanostructures: sputtering, dopant incorporation, and dynamic annealing

Johannes, Andreas, Holland-Moritz, Henry, Ronning, Carsten

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 2.05 MB

english, 2015

6

Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries

Martin-Horcajo, S, Wang, A, Bosca, A, Romero, M F, Tadjer, M J, Koehler, A D, Anderson, T J, Calle, F

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.51 MB

english, 2015

7

Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

García, S, Íñiguez-de-la-Torre, I, García-Pérez, O, Mateos, J, González, T, Sangaré, P, Gaquière, C, Pérez, S

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.09 MB

english, 2015

8

Control of persistent photoconductivity in nanostructured InP through morphology design

Monaico, Ed, Postolache, V, Borodin, E, Ursaki, V V, Lupan, O, Adelung, R, Nielsch, K, Tiginyanu, I M

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.44 MB

english, 2015

9

Background and interface electron populations in InAs 0.58 Sb 0.42

Svensson, S P, Crowne, F J, Hier, H S, Sarney, W L, Beck, W A, Lin, Y, Donetsky, D, Suchalkin, S, Belenky, G

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 355 KB

english, 2015

10

Properties of p - n -junctions formed by a laser irradiation of a surface of n -Cd 1− x Zn x Te single crystal

Khomyak, V V, Ilashchuk, M I, Shtepliuk, I I

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 853 KB

english, 2015

11

Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate

Jeong, Woo Jin, Kim, Tae Kyun, Moon, Jung Min, Park, Min Gyu, Yoon, Young Gwang, Hwang, Byeong Woon, Choi, Woo Young, Shin, Mincheol, Lee, Seok-Hee

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.25 MB

english, 2015

12

Identification of deep trap energies and influences of oxygen plasma ashing on semiconductor carrier lifetime

Koprowski, A, Humbel, O, Plappert, M, Krenn, H

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 2.24 MB

english, 2015

13

Segregation and evaporation behaviors of aluminum and calcium in silicon during solidification process induced by electron beam

Jiang, Dachuan, Shi, Shuang, Tan, Yi, Noor ul Huda Khan Asghar, H M, Qin, Shiqiang

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.21 MB

english, 2015

14

Fine structure and real space analysis of neutral acceptor states in GaAs

Nestoklon, M O, Krebs, O, Benchamekh, R, Voisin, P

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.09 MB

english, 2015

15

Hybrid GaN LED with capillary-bonded II–VI MQW color-converting membrane for visible light communications

Santos, Joao M M, Jones, Brynmor E, Schlosser, Peter J, Watson, Scott, Herrnsdorf, Johannes, Guilhabert, Benoit, McKendry, Jonathan J D, De Jesus, Joel, Garcia, Thor A, Tamargo, Maria C, Kelly, Anthon

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.13 MB

english, 2015

16

Modulation bandwidth of a double tunnelling-injection quantum dot laser

Asryan, Levon V

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.11 MB

english, 2015

17

Scavenging effect on plasma oxidized Gd 2 O 3 grown by high pressure sputtering on Si and InP substrates

Pampillón, M A, Feijoo, P C, San Andrés, E, García, H, Castán, H, Dueñas, S

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 629 KB

english, 2015

18

Characterization of deep level defects present in mono-like, quasi-mono and multicrystalline silicon solar substrates

Pérez, E, García, H, Castán, H, Dueñas, S

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.03 MB

english, 2015

19

Analytical electron microscopy study on gallium nitride systems doped with manganese and iron

Meingast, Arno, Navarro Quezada, Andrea, Devillers, Thibaut, Kovács, András, Albu, Mihela, Fladischer, Stefanie, Bonanni, Alberta, Kothleitner, Gerald

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 2.76 MB

english, 2015

20

Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

Kim, Dong-Seok, Won, Chul-Ho, Kang, Hee-Sung, Kim, Young-Jo, Kim, Yong Tae, Kang, In Man, Lee, Jung-Hee

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 926 KB

english, 2015

21

Linear piezoelectricity material constants for ammonothermal gallium nitride measured by bulk acoustic waves

Witczak, P, Witczak, Z, Jemielniak, R, Kryśko, M, Krukowski, S, Boćkowski, M

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 543 KB

english, 2015

22

Application of abnormally high sputtering rate of PbTe(Te) single crystals during inductively coupled argon plasma treatment for fabrication of nanostructures

Zimin, S P, Gorlachev, E S, Amirov, I I, Naumov, V V, Bagiyeva, G Z

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.36 MB

english, 2015

23

Role of growth temperature on the frequency response characteristics of pentacene-based organic devices

Shao, Yayun, Zhang, Yang, He, Wenqiang, Liu, Chuan, Minari, Takeo, Wu, Sujuan, Zeng, Min, Zhang, Zhang, Gao, Xingsen, Lu, Xubing, Liu, J-M

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.79 MB

english, 2015

24

High-performance Ge/GaAs heterojunction tunneling FET with a channel engineering for sub-0.5 V operation

Kim, Jin Su, Yoon, Young Jun, Seo, Jae Hwa, Jang, Young In, Lee, Jung-Hee, Cho, Seongjae, Yoo, Gwan Min, Kang, In Man

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 2.68 MB

english, 2015