Performance of Inversion, Accumulation, and Junctionless...

IEEE Electron Device Letters 2015 / 7 Vol. 36; Iss. 7

Performance of Inversion, Accumulation, and Junctionless Mode n-Type and p-Type Bulk Silicon FinFETs With 3-nm Gate Length

Thirunavukkarasu, Vasanthan, Jhan, Yi-Ruei, Liu, Yan-Bo, Wu, Yung-Chun
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2433303
Date:
July, 2015
File:
PDF, 1.46 MB
english, 2015
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