3C-SiC MOS Based Devices: From Material Growth to Device...

Materials Science Forum 2011 / 3 Vol. 679-680

3C-SiC MOS Based Devices: From Material Growth to Device Characterization

Lorenzzi, Jean, Esteve, Romain, Jegenyes, Nikoletta, Reshanov, Sergey A., Schöner, Adolf, Ferro, Gabriel
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.679-680.433
Date:
March, 2011
File:
PDF, 539 KB
english, 2011
Conversion to is in progress
Conversion to is failed