AlGaN/GaN Metal–Oxide–Semiconductor...

IEEE Electron Device Letters 2015 / 6 Vol. 36; Iss. 6

AlGaN/GaN Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor Integrated With Clamp Circuit to Enable Normally-Off Operation

Han, Sang-Woo, Park, Sung-Hoon, Lee, Jae-Gil, Lim, Jongtae, Cha, Ho-Young
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2427202
Date:
June, 2015
File:
PDF, 669 KB
english, 2015
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