Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness-dependent deformation potential
Choi, Sujin, Sun, Wookyung, Shin, HyungsoonVolume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/4/045009
Date:
April, 2015
File:
PDF, 908 KB
english, 2015