Volume 30; Issue 4

Semiconductor Science and Technology

Volume 30; Issue 4

1

Electronic structure of (Ga,Mn)As as seen by synchrotron radiation

Edmonds, Kevin, van der Laan, Gerrit, Panaccione, Giancarlo

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 2.51 MB

english, 2015

2

Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission

Ruterana, Pierre, Chauvat, Marie-Pierre, Lorenz, Katharina

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.45 MB

english, 2015

3

The effects of the intense laser and homogeneous electric fields on the electronic and intraband optical properties of a GaAs/Ga 0.7 Al 0.3 As quantum ring

Radu, A, Kirakosyan, A A, Laroze, D, Barseghyan, M G

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.57 MB

english, 2015

4

Controlled synthesis and facets-dependent photocatalysis of TiO 2 nanocrystals

Roy, Nitish, Park, Yohan, Sohn, Youngku, Pradhan, Debabrata

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 2.32 MB

english, 2015

5

Accelerated aging of 28 Gb s −1 850 nm vertical-cavity surface-emitting laser with multiple thick oxide apertures

Kropp, J R, Steinle, G, Schäfer, G, Shchukin, V A, Ledentsov, N N, Turkiewicz, J P, Zoldak, M

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 809 KB

english, 2015

6

Non-conventional routes to SiGe:P/Si(100) materials and devices based on -SiH 3 and -GeH 3 derivatives of phosphorus: synthesis, electrical performance and optical behavior

Xu, Chi, Gallagher, J D, Sims, P, Smith, D J, Menéndez, J, Kouvetakis, J

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.83 MB

english, 2015

7

Metal-insulator-semiconductor capacitors with water-containing hexagonal mesoporous silica (MCM-41) dielectric and high values of capacitance per unit area

Bernal, Y P, Juárez, R L, de Vasconcelos, E A, da Silva, E F, de Azevedo, W M

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 817 KB

english, 2015

8

Preparation and characterization of molybdenum-doped indium-zinc-oxide thin film transistors

Yang, Zhao, Wang, NaiQian, Qu, MingYue, Pu, HaiFeng, Zhang, Qun

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.54 MB

english, 2015

9

Optical, optoelectronic and photonic materials and applications

Jha, Animesh, Sweeney, Stephen J

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 139 KB

english, 2015

10

A new approach to model sensitivity of graphene-based gas sensors

Ghadiry, Mahdiar, Ismail, Razali, Naraghi, Bahareh, Taheri Abed, Sanaz, Kavosi, Daruosh, Fotovatikhah, Farnaz

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 365 KB

english, 2015

11

Ceramics and amorphous thin films based on gallium sulphide doped by rare-earth sulphides

Popescu, M, Sava, F, Lőrinczi, A, Velea, A, Simandan, I D, Badica, P, Burdusel, M, Galca, A C, Matei, E, Preda, N, Secu, M, Socol, G, Jipa, F, Zamfirescu, M, Balan, A

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 113 KB

english, 2015

12

Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane

Steele, J A, Lewis, R A, Sirbu, L, Enachi, M, Tiginyanu, I M, Skuratov, V A

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 349 KB

english, 2015

13

A study on III-nitride recessed-gate field-effect transistors using a remote-oxygen-plasma treatment

Lee, Y-C, Kao, T-T, Shen, S-C

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 845 KB

english, 2015

14

Solution-processed high-LUMO-level polymers in n -type organic field-effect transistors: a comparative study as a semiconducting layer, dielectric layer, or charge injection layer

Liu, Chuan, Xu, Yong, Liu, Xuying, Minari, Takeo, Sirringhaus, Henning, Noh, Yong-Young

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.66 MB

english, 2015

15

Nonlinear characteristics in fracture strength test of ultrathin silicon die

Liu, Zunxu, Huang, YongAn, Xiao, Lin, Tang, Pengpeng, Yin, Zhouping

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 2.39 MB

english, 2015

16

Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness-dependent deformation potential

Choi, Sujin, Sun, Wookyung, Shin, Hyungsoon

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 908 KB

english, 2015

17

Quantitative analysis and prediction of experimental observations on quasi-static hysteretic metal–ferroelectric–metal–insulator–semiconductor FET and its dynamic behaviour based on Landau theory

Li, Yang, Lian, Yong, Samudra, Ganesh S

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 972 KB

english, 2015

18

The influence of proximity induced ferromagnetism, superconductivity and Fermi-velocity on evolution of Berry phase in Bi 2 Se 3 topological insulator

Sengupta, Parijat, Klimeck, Gerhard

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 946 KB

english, 2015

19

Template method for nano-order positioning and dense packing of quantum dots for optoelectronic device application

Mukai, Kohki, Hirota, Akinobu, Shimizu, Yuta, Nakashima, Seisuke

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.34 MB

english, 2015

20

Four-transistor pinned photodiodes in standard CMOS technologies for time-of-flight sensors

Illade-Quinteiro, J, López, P, Brea, V, Cabello, D, Doménech-Asensi, G

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 889 KB

english, 2015

21

Corrigendum: Low and high density InAs nanowires on Si(001) and their Raman imaging (2013 Semicond. Sci. Technol. 28 015025)

Pal, Suparna, Singh, S D, Dixit, V K, Ingale, Alka, Tiwari, Pragya, Srivastava, Himanshu, Kumar, Ravi, Mukharjee, C, Prakash, P, Oak, S M

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 155 KB

english, 2015

22

Exploring the wavelength range of InP/AlGaInP QDs and application to dual-state lasing

Shutts, Samuel, Elliott, Stella N, Smowton, Peter M, Krysa, Andrey B

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.04 MB

english, 2015

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