Large periphery high-power AlGaN/GaN...

IEEE Electron Device Letters 2001 / 02 Vol. 22; Iss. 2

Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

Simin, G., Hu, X., Ilinskaya, N., Zhang, J., Tarakji, A., Kumar, A., Yang, J., Asif Khan, M., Gaska, R., Shur, M.S.
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Volume:
22
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.902829
Date:
February, 2001
File:
PDF, 103 KB
english, 2001
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