Volume 22; Issue 2

IEEE Electron Device Letters

Volume 22; Issue 2

1

High frequency characterization of gate resistance in RF MOSFETs

Yuhua Cheng, Matloubian, M.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 64 KB

english, 2001

2

On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?

Lochtefeld, A., Antoniadis, D.A.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 96 KB

english, 2001

3

Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors

Farmakis, F.V., Brini, J., Kamarinos, G., Dimitriadis, C.A.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 68 KB

english, 2001

4

Daumiller, I., Theron, D., Gaquiere, C., Vescan, A., Dietrich, R., Wieszt, A., Leier, H., Vetury, R., Mishra, U.K., Smorchkova, I.P.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 65 KB

english, 2001

5

Physical origin of the excess thermal noise in short channel MOSFETs

Jung-Suk Goo,, Chang-Hoon Choi,, Abramo, A., Jae-Gyung Ahn,, Zhiping Yu,, Lee, T.H., Dutton, R.W.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 48 KB

english, 2001

6

Fabrication of gate-all-around transistors using metal induced lateral crystallization

Chan, V.W.C., Chan, P.C.H.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 197 KB

english, 2001

7

Nonsilicide source/drain pixel for 0.25-/spl mu/m CMOS image sensor

Dun-Nian Yaung,, Shou-Gwo Wuu,, Yean-Kuen Fang,, Wang, C.S., Chien-Hsien Tseng,, Mon-Song Lian,

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 62 KB

english, 2001

8

Highly strained InGaP/InGaAs p-HEMT using reduced area growth

Sang-Soon Kim,, Jong-In Song,

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 201 KB

english, 2001

9

Interface induced uphill diffusion of boron: an effective approach for ultrashallow junction

Howard Chih-Hao Wang,, Chih-Chiang Wang,, Chih-Sheng Chang,, Tahui Wang,, Griffin, P.B., Diaz, C.H.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 46 KB

english, 2001

10

SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f/sub max/

Koester, S.J., Hammond, R., Chu, J.O., Mooney, P.M., Ott, J.A., Perraud, L., Jenkins, K.A., Webster, C.S., Lagnado, I., de la Houssaye, P.R.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 88 KB

english, 2001

11

Multiple layers of CMOS integrated circuits using recrystallized silicon film

Chan, V.W.C., Chan, P.C.H., Chan, M.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 124 KB

english, 2001

12

Empirical modeling of LF gate noise in GaAs DCFET in impact ionization regime

Lambert, B., Malbert, N., Labat, N., Verdier, F., Touboul, A.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 70 KB

english, 2001

13

A new laser-processed polysilicon TFT architecture

Fulks, R.T., Ho, J., Boyce, J.B.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 83 KB

english, 2001

14

High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates

Mishima, Y., Yoskino, K., Takeuchi, F., Ohgata, K., Takei, M., Sasaki, N.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 59 KB

english, 2001

15

InAlAs/InGaAs HBTs with simultaneously high values of F/sub /spl tau// and F/sub max/ for mixed analog/digital applications

Betser, Y., Scott, D., Mensa, D., Jaganathan, S., Mathew, T., Rodwell, M.J.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 126 KB

english, 2001

16

Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

Simin, G., Hu, X., Ilinskaya, N., Zhang, J., Tarakji, A., Kumar, A., Yang, J., Asif Khan, M., Gaska, R., Shur, M.S.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 103 KB

english, 2001