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Volume 22; Issue 2
Main
IEEE Electron Device Letters
Volume 22; Issue 2
IEEE Electron Device Letters
Volume 22; Issue 2
1
High frequency characterization of gate resistance in RF MOSFETs
Yuhua Cheng
,
Matloubian, M.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 64 KB
Your tags:
english, 2001
2
On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?
Lochtefeld, A.
,
Antoniadis, D.A.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 96 KB
Your tags:
english, 2001
3
Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors
Farmakis, F.V.
,
Brini, J.
,
Kamarinos, G.
,
Dimitriadis, C.A.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 68 KB
Your tags:
english, 2001
4
Daumiller, I.
,
Theron, D.
,
Gaquiere, C.
,
Vescan, A.
,
Dietrich, R.
,
Wieszt, A.
,
Leier, H.
,
Vetury, R.
,
Mishra, U.K.
,
Smorchkova, I.P.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 65 KB
Your tags:
english, 2001
5
Physical origin of the excess thermal noise in short channel MOSFETs
Jung-Suk Goo,
,
Chang-Hoon Choi,
,
Abramo, A.
,
Jae-Gyung Ahn,
,
Zhiping Yu,
,
Lee, T.H.
,
Dutton, R.W.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 48 KB
Your tags:
english, 2001
6
Fabrication of gate-all-around transistors using metal induced lateral crystallization
Chan, V.W.C.
,
Chan, P.C.H.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 197 KB
Your tags:
english, 2001
7
Nonsilicide source/drain pixel for 0.25-/spl mu/m CMOS image sensor
Dun-Nian Yaung,
,
Shou-Gwo Wuu,
,
Yean-Kuen Fang,
,
Wang, C.S.
,
Chien-Hsien Tseng,
,
Mon-Song Lian,
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 62 KB
Your tags:
english, 2001
8
Highly strained InGaP/InGaAs p-HEMT using reduced area growth
Sang-Soon Kim,
,
Jong-In Song,
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 201 KB
Your tags:
english, 2001
9
Interface induced uphill diffusion of boron: an effective approach for ultrashallow junction
Howard Chih-Hao Wang,
,
Chih-Chiang Wang,
,
Chih-Sheng Chang,
,
Tahui Wang,
,
Griffin, P.B.
,
Diaz, C.H.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 46 KB
Your tags:
english, 2001
10
SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f/sub max/
Koester, S.J.
,
Hammond, R.
,
Chu, J.O.
,
Mooney, P.M.
,
Ott, J.A.
,
Perraud, L.
,
Jenkins, K.A.
,
Webster, C.S.
,
Lagnado, I.
,
de la Houssaye, P.R.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 88 KB
Your tags:
english, 2001
11
Multiple layers of CMOS integrated circuits using recrystallized silicon film
Chan, V.W.C.
,
Chan, P.C.H.
,
Chan, M.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 124 KB
Your tags:
english, 2001
12
Empirical modeling of LF gate noise in GaAs DCFET in impact ionization regime
Lambert, B.
,
Malbert, N.
,
Labat, N.
,
Verdier, F.
,
Touboul, A.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 70 KB
Your tags:
english, 2001
13
A new laser-processed polysilicon TFT architecture
Fulks, R.T.
,
Ho, J.
,
Boyce, J.B.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 83 KB
Your tags:
english, 2001
14
High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates
Mishima, Y.
,
Yoskino, K.
,
Takeuchi, F.
,
Ohgata, K.
,
Takei, M.
,
Sasaki, N.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 59 KB
Your tags:
english, 2001
15
InAlAs/InGaAs HBTs with simultaneously high values of F/sub /spl tau// and F/sub max/ for mixed analog/digital applications
Betser, Y.
,
Scott, D.
,
Mensa, D.
,
Jaganathan, S.
,
Mathew, T.
,
Rodwell, M.J.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 126 KB
Your tags:
english, 2001
16
Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging
Simin, G.
,
Hu, X.
,
Ilinskaya, N.
,
Zhang, J.
,
Tarakji, A.
,
Kumar, A.
,
Yang, J.
,
Asif Khan, M.
,
Gaska, R.
,
Shur, M.S.
Journal:
IEEE Electron Device Letters
Year:
2001
Language:
english
File:
PDF, 103 KB
Your tags:
english, 2001
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