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Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to Inversion
Chen, Han-Ping, Yuan, Yu, Yu, Bo, Ahn, Jaesoo, McIntyre, Paul C., Asbeck, Peter M., Rodwell, Mark J. W., Taur, YuanVolume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2012.2205255
Date:
September, 2012
File:
PDF, 917 KB
english, 2012