Growth of GaN layer by metal-organic chemical vapor...

Growth of GaN layer by metal-organic chemical vapor deposition system with a novel three-flow reactor

H.X Wang, T Wang, S Mahanty, F Komatsu, T Inaoka, K Nishino, S Sakai
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Volume:
218
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0022-0248(00)00553-4
File:
PDF, 658 KB
english, 2000
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