Volume 218; Issue 2-4

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Journal of Crystal Growth
Volume 218; Issue 2-4

Journal of Crystal Growth

Volume 218; Issue 2-4

1

Growth, thermal and microhardness studies of single crystals of potassium penta borate (KB5)

K. Thamizharasan, S. Xavier Jesu Raja, Francis P. Xavier, P. Sagayaraj

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 156 KB

english, 2000

2

Distinctive features of automated pulling of large scintillation alkali iodides single crystals without oxygen-containing impurities

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 102 KB

english, 2000

3

Impurity incorporation during epitaxial growth of GaAs by chemical reaction

M Gandouzi, J.C Bourgoin, J Mimila-Arroyo, Cl Grattepain, Ch Grattepain

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 151 KB

english, 2000

4

Infrared studies on GaN single crystals and homoepitaxial layers

E Frayssinet, W Knap, P Prystawko, M Leszczynski, I Grzegory, T Suski, B Beaumont, P Gibart

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 162 KB

english, 2000

5

Improved protein crystallization by vapor diffusion from drops in contact with transparent, self-assembled monolayers on gold-coated glass coverslips

David Ji, Christine M Arnold, Michael Graupe, Eric Beadle, Robert V Dunn, My N Phan, Ramon J Villazana, Ronald Benson, Ramon Colorado Jr, T Randall Lee, Jonathan M Friedman

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 428 KB

english, 2000

6

Growth and structure of Cr thin films on GaAs(0 0 1)

D Qian, G.L Liu, D Loison, G.S Dong, X.F Jin

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 239 KB

english, 2000

7

Thin molecular films of neutral tetrathiafulvalene-derivatives

S Molas, J Caro, J Santiso, A Figueras, J Fraxedas, C Méziére, M Fourmigué, P Batail

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 626 KB

english, 2000

8

The effect of N+-implanted Si(1 1 1) substrate and buffer layer on GaN films

Eui Kwan Koh, Young Ju Park, Eun Kyu Kim, Chan Soo Park, Suk Hun Lee, Jung Hee Lee, Sung Ho Choh

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 259 KB

english, 2000

9

Simulation of radial solute segregation in vertical Bridgman growth of pyridine-doped benzene, a surrogate for binary organic nonlinear optical materials

Hanjie Lee, Arne J. Pearlstein

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 432 KB

english, 2000

10

Minority-carrier lifetime optimization in silicon MOS devices by intrinsic gettering

Kwang Su Choe, Byung Nam Jang

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 141 KB

english, 2000

11

Growth of GaN layer by metal-organic chemical vapor deposition system with a novel three-flow reactor

H.X Wang, T Wang, S Mahanty, F Komatsu, T Inaoka, K Nishino, S Sakai

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 658 KB

english, 2000

12

A surface kinetics model for the growth of Si1−xGex by UHV/CVD using SiH4/GeH4

Yu Zhuo, Li Daizong, Cheng Buwen, Huang Changjun, Lei Zhenlin, Yu Jinzhong, Wang Qiming, Liang Junwu

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 190 KB

english, 2000

13

Epitaxial growth of Fe/Pd-multilayers onto sapphire

Ch Müller, H Mühlbauer, T Steffl, B Rellinghaus, G Dumpich

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 460 KB

english, 2000

14

Effect of ferricenium salts on the crystal growth of hydroxyapatite in aqueous solution

S Koutsopoulos, E Pierri, E Dalas, N Tzavellas, N Klouras

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 118 KB

english, 2000

15

Spontaneous precipitation of calcium carbonate in the presence of ethanol, isopropanol and diethylene glycol

F Manoli, E Dalas

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 392 KB

english, 2000

16

Room temperature 1.55 μm emission from InAs quantum dots grown on (0 0 1)InP substrate by molecular beam epitaxy

Y.F Li, X.L Ye, B Xu, F.Q Liu, D Ding, W.H Jiang, Z.Z Sun, Y.C Zhang, H.Y Liu, Z.G Wang

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 134 KB

english, 2000

17

Some inclusions and defects in a synthetic diamond single crystal

Long-Wei Yin, Zeng-Da Zou, Mu-Sen Li, Yu-Xian Liu, Zhao-Yin Hao, Jian-Jun Cui

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 284 KB

english, 2000

18

Compositional variation and precipitate structures of copper–beryllium single crystals grown by the Bridgman technique

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 856 KB

english, 2000

19

Measurements of clathrate-hydrate film thickness using laser interferometry

Ryo Ohmura, Shigetoyo Kashiwazaki, Yasuhiko H. Mori

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 377 KB

english, 2000

20

Growth and characterization of LiInS2 single crystals

L Isaenko, I Vasilyeva, A Yelisseyev, S Lobanov, V Malakhov, L Dovlitova, J.-J Zondy, I Kavun

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 316 KB

english, 2000

21

The effect of oscillatory shear flow on step bunching

B.T. Murray, S.R. Coriell, A.A. Chernov, G.B. McFadden

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 223 KB

english, 2000

22

Solidification of aluminium–lithium alloys near the cell/dendrite transition-influence of solutal convection

B Drevet, H Nguyen Thi, D Camel, B Billia, M.D Dupouy

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 835 KB

english, 2000

23

Study of high quality GaN grown by OMVPE using an intermediate layer

M Benamara, Z Liliental-Weber, S Kellermann, W Swider, J Washburn, J Mazur, E.D Bourret-Courchesne

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 188 KB

english, 2000

24

Orientation of aluminum nitride films grown with hyperthermal molecular beams

V.W Ballarotto, M.E Little, M.E Kordesch

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 165 KB

english, 2000

25

The effect of AlN buffer layer on GaN grown on (1 1 1)-oriented Si substrates by MOCVD

S Zamir, B Meyler, E Zolotoyabko, J Salzman

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 1.17 MB

english, 2000

26

Dislocation density analyses of GaAs bulk single crystal during growth process (effects of crystal anisotropy)

N. Miyazaki, Y. Kuroda, M. Sakaguchi

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 470 KB

english, 2000

27

Analytical studies on the crystal–melt interface shape in the Czochralski process for oxide single crystals

Ja Hoon Jeong, In Seok Kang

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 361 KB

english, 2000

28

MBE growth and Raman studies of cubic and hexagonal GaN films on (0 0 1)-oriented GaAs substrates

H.F. Liu, H. Chen, Z.Q. Li, L. Wan, Q. Huang, J.M. Zhou, N. Yang, K. Tao, Y.J. Han, Y. Luo

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 168 KB

english, 2000

29

Topotactical growth of indium sulfide by evaporation of metal onto molybdenite

C. Kaito, A. Ito, S. Kimura, Y. Kimura, Y. Saito, T. Nakada

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 882 KB

english, 2000

30

Float zone growth and characterization of Pr9.33(SiO4)6O2 and Sm9.33(SiO4)6O2 single crystals with an apatite structure

Mikio Higuchi, Hiroyuki Katase, Kohei Kodaira, Susumu Nakayama

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 280 KB

english, 2000

31

Formation of InAs quantum dots on low-temperature GaAs epi-layer

X.D Wang, Z.C Niu, H Wang, S.L Feng

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 155 KB

english, 2000

32

Mechanisms of spiral growth in Bi2Te3 thin films grown by the hot-wall-epitaxy technique

Marhoun Ferhat, Jean Claude Tedenac, Jiro Nagao

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 477 KB

english, 2000

33

Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy

X.Q Shen, T Ide, S.H Cho, M Shimizu, S Hara, H Okumura, S Sonoda, S Shimizu

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 247 KB

english, 2000

34

Study on defects in CZ-Si crystals grown by normal, cusp magnetic field and electromagnetic field techniques using multi-chroic infrared light scattering tomography

Minya Ma, Toshiharu Irisawa, Toshihide Tsuru, Tomoya Ogawa, Masahito Watanabe, Minoru Eguchi

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 405 KB

english, 2000

35

Growth and recrystallization of CeO2 thin films deposited on R-plane sapphire by off-axis RF sputtering

M Španková, I Vávra, Š Gaži, D Machajdı́k, Š Chromik, K Fröhlich, L Hellemans, Š Beňačka

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 575 KB

english, 2000

36

Growth and structural analysis of nano-diamond films deposited on Si substrates pretreated by various methods

N Jiang, S Kujime, I Ota, T Inaoka, Y Shintani, H Makita, A Hatta, A Hiraki

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 806 KB

english, 2000

37

Growth of bis(thiourea) cadmium chloride single crystals — a potential NLO material of organometallic complex

P.M. Ushasree, R. Muralidharan, R. Jayavel, P. Ramasamy

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 192 KB

english, 2000

38

Growth of epitaxial CoSi2 films on Si(1 0 0) substrates through direct solid phase reaction between crystalline Co films and Si substrates

J.F Liu, J.Y Feng, J Zhu

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 177 KB

english, 2000

39

Containerless processing using floating zone technique on the ground

X. Jia, A. Miyazaki, H. Kimura

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 341 KB

english, 2000

40

Structural defects in flux-grown stoichiometric LiNbO3 single crystals

K Polgár, Á Péter, I Földvári, Zs Szaller

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 413 KB

english, 2000

41

Growth of M-plane GaN(1 1̄ 0 0) on γ-LiAlO2(1 0 0)

P Waltereit, O Brandt, M Ramsteiner, R Uecker, P Reiche, K.H Ploog

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 226 KB

english, 2000

42

The effect of substrate orientation on the morphology of InAs nanostructures on (0 0 1) and (1 1 n)A/B (n=1–5) InP substrates

Zhongzhe Sun, Ju Wu, Yonghai Chen, Fengqi Liu, Ding Ding, Yuefa Li, Bo Xu, Zhanguo Wang

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 554 KB

english, 2000

43

Index

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 68 KB

english, 2000

44

Index

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 33 KB

english, 2000

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