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A surface kinetics model for the growth of Si1−xGex by UHV/CVD using SiH4/GeH4
Yu Zhuo, Li Daizong, Cheng Buwen, Huang Changjun, Lei Zhenlin, Yu Jinzhong, Wang Qiming, Liang JunwuVolume:
218
Year:
2000
Language:
english
Pages:
5
DOI:
10.1016/s0022-0248(00)00555-8
File:
PDF, 190 KB
english, 2000